Title of article
Alloy effects in Ga1−xInxN/GaN heterostructures
Author/Authors
Nguyen، نويسنده , , Duc-Phuong and Regnault، نويسنده , , N. and Ferreira، نويسنده , , R. and Bastard، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
751
To page
754
Abstract
We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the virtual crystal approximation to describe the electronic structure of Ga1−xInxN/GaN heterostructures, while this approximation works very well for the Ga1−xInxAs/GaAs heterostructures.
Keywords
A. Nanostructures , A. Nitride alloy , C. virtual crystal approximation
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1788968
Link To Document