• Title of article

    Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

  • Author/Authors

    Qiu، نويسنده , , Z.J. and Gui، نويسنده , , Y.S. and Lin، نويسنده , , T. and Lu، نويسنده , , J. and Tang، نويسنده , , N. and Shen، نويسنده , , B. X. Dai، نويسنده , , N. and Chu، نويسنده , , J.H.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    4
  • From page
    37
  • To page
    40
  • Abstract
    The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al0.22Ga0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τt/τq∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin–orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T−1 law, indicating that electron–electron scattering with small energy transfer is the dominant inelastic process.
  • Keywords
    A. Quantum well , D. Two-dimensional electron gas , D. Magnetoresistance
  • Journal title
    Solid State Communications
  • Serial Year
    2004
  • Journal title
    Solid State Communications
  • Record number

    1789014