Title of article
Relationship between phase and generation mechanisms of THz waves in InAs
Author/Authors
Jeong، نويسنده , , H. and Shin، نويسنده , , S.H and Kim، نويسنده , , S.Y. and Song، نويسنده , , J.D. and CHOI، نويسنده , , S.B. and Lee، نويسنده , , D.S. and LEE، نويسنده , , J. and Jho، نويسنده , , Y.D.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2012
Pages
5
From page
668
To page
672
Abstract
We investigated the thickness-dependent characteristics of THz waves from InAs epilayers whose thickness ranges from 0.01 to 1.74 μm. The amplitude showed monotonic increments up to 0.9 μm, followed by a saturation at 1.74 μm. Interestingly, the phase of THz waves was reversed around absorption depth and used to identify the transient dipole direction based on simulated band diagram. We could further distinguish dominant THz wave generation mechanisms, associated with the phase information.
Keywords
terahertz , InAs , Phase shift , diffusion , Photo-Dember effect
Journal title
Current Applied Physics
Serial Year
2012
Journal title
Current Applied Physics
Record number
1789126
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