Title of article
Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition
Author/Authors
Fung، نويسنده , , M.K. and Wong، نويسنده , , K.K. and Chen، نويسنده , , X.Y. and Chan، نويسنده , , Y.F. and Ng، نويسنده , , A.M.C. and Djuri?i?، نويسنده , , A.B. and Chan، نويسنده , , W.K.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2012
Pages
10
From page
697
To page
706
Abstract
Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiOx nanowires, a mixture of SiOx and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures.
Keywords
nanowires , metal oxide , Ito
Journal title
Current Applied Physics
Serial Year
2012
Journal title
Current Applied Physics
Record number
1789141
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