• Title of article

    Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition

  • Author/Authors

    Fung، نويسنده , , M.K. and Wong، نويسنده , , K.K. and Chen، نويسنده , , X.Y. and Chan، نويسنده , , Y.F. and Ng، نويسنده , , A.M.C. and Djuri?i?، نويسنده , , A.B. and Chan، نويسنده , , W.K.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2012
  • Pages
    10
  • From page
    697
  • To page
    706
  • Abstract
    Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiOx nanowires, a mixture of SiOx and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures.
  • Keywords
    nanowires , metal oxide , Ito
  • Journal title
    Current Applied Physics
  • Serial Year
    2012
  • Journal title
    Current Applied Physics
  • Record number

    1789141