Title of article
Luminescence intensity and color purity enhancement in nanostructured β-Ga2O3:Eu3+ phosphors
Author/Authors
Kim، نويسنده , , J.S. and Kim، نويسنده , , H.E. and Park، نويسنده , , H.L and Kim، نويسنده , , G.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
459
To page
463
Abstract
Nanostructured and bulk β-Ga2O3:Eu3+ phosphors are synthesized through sol–gel and solid-state reaction techniques, respectively. Nanostructured β-Ga2O3:Eu3+ phosphors show the average size of 80 nm and the organic materials coming from the starting materials. Excitation spectra of nanostructured β-Ga2O3:Eu3+ shift to longer wavelength side. The nanostructured β-Ga2O3:Eu3+ phosphors show the different emission spectra from bulk β-Ga2O3:Eu3+ phosphors due to distortion of Eu3+ symmetry resulting from the surface strain. The color purity of nanostructured β-Ga2O3:Eu3+ is enhanced in comparison with bulk β-Ga2O3:Eu3+. The higher concentration quenching in nanostructured β-Ga2O3:Eu3+ is done with higher luminescent intensity than bulk β-Ga2O3:Eu3+ due to the surface hindrance of resonant energy transfer.
Keywords
A. Nanostructures , D. Luminescence , B. Sol–gel chemistry
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1789332
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