Title of article
A mild reduction–phosphidation approach to nanocrystalline GaP
Author/Authors
Chen، نويسنده , , Luyang and Luo، نويسنده , , Tao and Huang، نويسنده , , Mingxing and Gu، نويسنده , , Yunle and Shi، نويسنده , , Hong-liang and Qian، نويسنده , , Yitai، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
667
To page
671
Abstract
Nanocrystalline gallium phosphide (GaP) has been prepared through a reduction–phosphidation by using Ga, PCl3 as gallium and phosphorus sources and metallic sodium as reductant at 350 °C. The XRD pattern can be indexed as cublic GaP with the lattice constant of a=5.446 Å. The TEM image shows particle-like polycrystals and flake-like single crystals. The PL spectrum exhibits one peak at 330 nm for the as-prepared nanocrystalline GaP.
Keywords
A. Gallium phosphide , B. Chemical synthesis , C. Transmission electron microscopy , C. X-ray diffraction
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1789410
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