Title of article
Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors
Author/Authors
B. and Veinger، نويسنده , , A.I. and Zabrodskii، نويسنده , , A.G. and Tisnek، نويسنده , , T.V. and Goloshchapov، نويسنده , , S.I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
455
To page
458
Abstract
The first observation of low-temperature magnetoresistance (MR) of interference nature in the case of a light doping is reported. The MR occurs in n- and p-type Ge samples at a frequency of 10 GHz at temperatures below 30 K in weak magnetic fields on the background of the classical MR effect associated with electrons in different valleys (n-Ge) and with heavy and light holes (p-Ge).
Keywords
D. Electronic transport , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2005
Journal title
Solid State Communications
Record number
1789645
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