Magnetic properties of p-doped GaMnN diluted magnetic semiconductors containing clusters

Magnetic properties of p-doped GaMnN diluted magnetic semiconductors, having both randomly distributed Mn ions and MnxNy clusters, are presented under the theory based on the hole-mediated ferromagnetism. The critical temperature of the second order phase transition between ferromagnetic and paramagnetic phases and the magnetization as a function of temperature are obtained from the free energy calculation. The Curie temperature of the p-doped GaMnN containing clusters depends not on the type of clusters but on the composition rate of clusters. The behavior of the spontaneous magnetization as a function of temperature is strongly affected by carrier concentration. The p-doped GaMnN diluted magnetic semiconductors containing clusters have room temperature ferromagnetism regardless of the magnetic type of clusters, as long as hole-mediated spin–spin interactions occur in them.