Title of article
Scanning tunneling microscopy and spectroscopy of Se and Te nanorods
Author/Authors
Gautam، نويسنده , , Ujjal K. and Gundiah، نويسنده , , Gautam and Kulkarni، نويسنده , , G.U.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
169
To page
172
Abstract
Se and Te nanorods obtained by a self-seeding solution growth process have been examined by scanning tunneling microscopy and spectroscopy (STM/STS). The diameters of the rods, as revealed by STM images were in the range of 10–60 nm, with aspect ratios of 10–20. The I–V data of the Se and Te nanorods exhibit band gaps of ∼1.3 and ∼0.4 eV, respectively, nearly independent of the diameter, and these values are close to the bulk values of Se and Te. In both the cases, the nanorods possess a small but finite conductance even in the band gap regions, the conductance value increasing with the diameter of the rod. A tunneling mechanism involving the surface states is proposed to explain this phenomenon.
Keywords
D. Electronic transport , A. Nanostructures , C. Scanning tunneling microscopy and spectroscopy
Journal title
Solid State Communications
Serial Year
2005
Journal title
Solid State Communications
Record number
1790229
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