Kondo lattice behaviour in CePt2(Si1−xSnx)2 alloys

Measurements of electrical resistivity are presented for polycrystalline alloys in the CePt2(Si1−xSnx)2 system. Results of X-ray diffraction indicate that the tetragonal region of the CePt2(Si1−xSnx)2 alloy system that is amenable for study only extends up to x=0.3. The resistivity maximum characteristic of a Kondo lattice is observed at a temperature Tmax=63 K for the parent compound CePt2Si2 and shifts to lower temperatures with increase in Sn content. The compressible Kondo lattice model is applied to describe the results of Tmax in terms of the on-site Kondo exchange interaction J and the electron density of states at the Fermi level N(EF). A value of |JN(EF)|=0.060±0.009 for the parent compound is obtained from the experimental results.