Title of article
Electric transport character in the La0.7Ce0.3MnO3–SrTiO3–Nb heterojunction
Author/Authors
Sheng، نويسنده , , Z.G. and Song، نويسنده , , W.H. and Sun، نويسنده , , Y.P. and Sun، نويسنده , , J.R and Shen، نويسنده , , B.G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
292
To page
295
Abstract
The electric transport character in heterojunction composed of a La0.7Ce0.3MnO3 film and a 0.5 wt% Nb-doped SrTiO3 substrate (LCEM/STON) is investigated. It is found that the energy band gap (Eg) between LCEM and STON decreases with increasing temperatures. The most striking observation of present work is that there exists a variation of reverse transport mechanism from ionization to tunneling at the temperature of 175 K. We attribute the temperature dependence of reverse transport mechanism to co-work of Eg and the ferromagnetic (FM) insulting phase in the heterojunction. These results are helpful in configuring artificial devices using manganites.
Keywords
A. Heterojunctions , A. Magnetically ordered materials , D. Tunneling
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790447
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