Title of article
Optoelectronic characteristics of close-packed HgTe nanoparticles in the infrared range
Author/Authors
Kim، نويسنده , , Hyunsuk and Cho، نويسنده , , Kyoungah and Park، نويسنده , , Byungjun and Kim، نويسنده , , Jin-Hyoung and Lee، نويسنده , , Jun Woo and Kim، نويسنده , , Sangsig and Noh، نويسنده , , Taeyong and Jang، نويسنده , , Eunjoo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
315
To page
319
Abstract
Absorption, photoluminescence (PL), photoresponse, and I–V measurements were made for a close-packed HgTe nanoparticle film without organic capping materials to investigate its optoelectronic characteristics in the infrared (IR) range. In the absorption and PL spectra taken for the close-packed nanoparticle film, the wavelength of exciton peak was red-shifted, compared with 1-thioglycerol capped HgTe nanoparticles dispersed in solution. For the HgTe nanoparticle film, dark current was below several pA level, current was increased by about three orders of magnitude at a biased voltage of 3 V under the illumination, and photoresponse was very rapid compared with 1-thioglycerol capped HgTe nanoparticles. These optoelectronic characteristics illustrate that HgTe nanoparticles are one of promising materials for the photodetector in the IR range. Finally, the origin for the increase of photocurrent with increasing temperature observed in this study will be discussed.
Keywords
D. Photocurrent , E. Photoluminesence , B. Trap-mediated hopping process , A. HgTe nanoparticles
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790456
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