Title of article
Influence of sublayer atoms on Si(100) surface reconstructions
Author/Authors
Guo، نويسنده , , C.S and Fan، نويسنده , , W.J. and Zhang، نويسنده , , R.Q.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
553
To page
556
Abstract
Influence of sublayer atoms on Si(100) surface reconstruction has been examined with density functional theory and molecular dynamic simulation. We found that the displacements of sublayer atoms under the buckled dimer affect the motions of their neighboring atoms and thus play an important role in determining the surface reconstructions. The present results reveal the relationship between the surface dimer reconstruction and the motion of the sublayer atoms and provide an account for experimental observations of Si(100) surface reconstructions at very low temperatures.
Keywords
D. Surface reconstruction , E. Density functional theory , A. Si(100) surface , D. Sublayer , E. Molecular dynamic simulation
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790555
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