• Title of article

    Influence of sublayer atoms on Si(100) surface reconstructions

  • Author/Authors

    Guo، نويسنده , , C.S and Fan، نويسنده , , W.J. and Zhang، نويسنده , , R.Q.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    553
  • To page
    556
  • Abstract
    Influence of sublayer atoms on Si(100) surface reconstruction has been examined with density functional theory and molecular dynamic simulation. We found that the displacements of sublayer atoms under the buckled dimer affect the motions of their neighboring atoms and thus play an important role in determining the surface reconstructions. The present results reveal the relationship between the surface dimer reconstruction and the motion of the sublayer atoms and provide an account for experimental observations of Si(100) surface reconstructions at very low temperatures.
  • Keywords
    D. Surface reconstruction , E. Density functional theory , A. Si(100) surface , D. Sublayer , E. Molecular dynamic simulation
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1790555