Title of article
Electronic band gap of SrSe at high pressure
Author/Authors
David Atkinson، نويسنده , , Timothy and Chynoweth، نويسنده , , Katie Mae and Cervantes، نويسنده , , Phillip، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
215
To page
217
Abstract
The electronic band gap of SrSe, in the CsCl-stuctured phase, was measured to 42 GPa via optical absorption studies. The indirect electronic band gap was found to close monotonically with pressure for the range of pressures studied. The change in band gap with respect to pressure, dEgap/dP, was determined to be −6.1(5)×10−3 eV/GPa. By extrapolation of our line fit, we estimate band gap closure to occur at 180(20) GPa.
Keywords
A. Chalcogenides , D. Band structure , A. Semiconductor , E. High pressure
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790935
Link To Document