• Title of article

    The resistivity of grain boundary of K-doped ruthenates in percolative conduction regime

  • Author/Authors

    Nhat، نويسنده , , Hoang Nam and Chinh، نويسنده , , Huynh Dang and Phan، نويسنده , , Manh-Huong Phan، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    456
  • To page
    459
  • Abstract
    Percolation theory has been involved to explain the temperature dependence of conductivity in the K-doped perovskite ruthenates and to estimate the resistivity of grain boundary in the percolative conduction regime. Using the two-layer simple effective medium model [A. Gupta, G.Q. Gong, G. Xiao, P.R. Duncombe, P. Lecoeur, P. Trouilloud, Y.Y. Wang, V.P. Dravis, J.Z. Sun, Phys. Rev. B 54 (1996) R15629] and assuming the scaling property of grain boundary system, we have obtained the new formula for grain boundary resistivity, which contains important factors for the grain size, boundary thickness, and boundary fractal dimension. The numerical results for the system A0.5K0.5RuO3 (A=La, Y, Nd, Pr) are in very good agreement with the experiment. Importantly, it reveals that the percolative conduction plays a significant role in ceramic compounds containing polycrystalline grains and grain boundaries.
  • Keywords
    A. Ruthenates , D. Percolation , C. Grain boundary , D. Resistivity , D. Fractal
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1791032