Title of article
The effect of optically-induced random anisotropic disorder on a two-dimensional electron system
Author/Authors
Melhuish، نويسنده , , G.P. and Plaut، نويسنده , , A.S. and Simon، نويسنده , , S.H. and Holland، نويسنده , , M.C. and Stanley، نويسنده , , C.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
6
From page
94
To page
99
Abstract
We have studied the effect of optically-induced random, anisotropic disorder on the magnetoresistance of a Al0.3Ga0.7As/ GaAs two-dimensional electron system by exposing the heterojunction to an asymmetric laser speckle pattern. Changes in the amplitude of the Shubnikov–de Haas oscillations can be explained in terms of easy and hard conductivity paths parallel and perpendicular to the long axis of the oval speckle grains. We also observe corresponding changes in the electron scattering rates.
Keywords
D. Disorder , A. Heterojunction , D. Quantum hall effect
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1791102
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