Title of article
Carrier localization in InN epilayers grown on Si substrates
Author/Authors
Shu، نويسنده , , G.W. and Lo، نويسنده , , M.H. and Yang، نويسنده , , M.D. and Hsu، نويسنده , , C.L. and Shen، نويسنده , , J.L. and Lan، نويسنده , , S.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
109
To page
112
Abstract
The carrier localization in InN epilayers grown on Si(111) was studied using time-resolved photoluminescence (PL). The emission energy dependence and temperature dependence of the PL decay times revealed that carrier localization plays an important role in the recombination of this material system. A model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states explains the carrier localization of InN epilayers. We suggest that the carrier localization in InN can be accounted for by the potential fluctuation caused by the random impurities.
Keywords
A. Semiconductors , D. Optical properties
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791192
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