Effective Landé factor of conduction electrons in GaAs and AlSb

Using third and fourth order perturbation theory inside a 14-band and 30-band k ⋅ p model, we have calculated the effective Landé factor g ∗ of Γ 6 C conduction electrons in GaAs and AlSb. A strong variation between both models is observed. We show that the 14-band formalism even in fourth order perturbation theory is not sufficient to predict an experimental data of g ∗ . However, results deduced by the 30-band k ⋅ p model are consistent with experimental data. In particular, the k ⋅ p Hamiltonian parameters are adjusted such that the g ∗ of GaAs and AlSb are respectively −0.391 and 0.81, in excellent agreement with the experimental values of −0.44 and 0.84.