Title of article
Pseudospin in Si -doped InAlAs/InGaAs/InAlAs single quantum well
Author/Authors
Zhou، نويسنده , , W.Z. and Huang، نويسنده , , Z.M. and Qiu، نويسنده , , Z.J. and Lin، نويسنده , , Sergey T. and Shang، نويسنده , , L.Y. and Li، نويسنده , , D.L. and Gao، نويسنده , , H.L. and Cui، نويسنده , , L.J. and Zeng، نويسنده , , Y.P. and Guo، نويسنده , , S.L. and Gui، نويسنده , , Y.S. and Dai، نويسنده , , N. and Chu، نويسنده , , J.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
393
To page
397
Abstract
Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov–de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.
Keywords
A. Quantum wells , D. Electronic transport , D. Tunnelling
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791571
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