Title of article
Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
Author/Authors
Lee، نويسنده , , D.J. and Park، نويسنده , , C.S. and Lee، نويسنده , , Cheol Jin and Song، نويسنده , , J.D. and Koo، نويسنده , , H.C. and Yoon، نويسنده , , Chong S. and Yoon، نويسنده , , Im Taek and Kim، نويسنده , , H.S. and Kang، نويسنده , , T.W. and Shon، نويسنده , , Yoon، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2014
Pages
5
From page
558
To page
562
Abstract
The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1–3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p–d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.
Keywords
p-type InP:Be/Mn/InP:Be triple layers , MBE , Increased Tc
Journal title
Current Applied Physics
Serial Year
2014
Journal title
Current Applied Physics
Record number
1791960
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