• Title of article

    Ballistic transport in extended Datta–Das spin field effect transistors

  • Author/Authors

    Xiao، نويسنده , , Yun-Chang and Zhu، نويسنده , , Jun-Rui and Deng، نويسنده , , Wen-Ji، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    6
  • From page
    1214
  • To page
    1219
  • Abstract
    The model of the Datta–Das spin field effect transistor [S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665] is extended in several respects: (1) the Rashba effect and Dresselhaus effect coexist; (2) the incoming and outgoing leads are both ferromagnetic; (3) the interfacial scattering and band mismatch are taken into account. By using the Griffith boundary conditions, the transmission coefficients and, thus, the Landauer–Büttiker conductance are obtained analytically. The transmission probability and conductance of the spin field effect transistor are studied in detail.
  • Keywords
    D. Dresselhaus effect , E. Spin field effect transistor , D. Rashba effect
  • Journal title
    Solid State Communications
  • Serial Year
    2011
  • Journal title
    Solid State Communications
  • Record number

    1792560