Probing into the effect of Auger recombination mechanism on zero bias resistance–area product in In1−xGaxAs detector

D * (Detectivity), an important figure of merit for photodetectors, is limited by zero bias resistance–area product ( R 0 A ) . R 0 A is determined by Auger recombination mechanism, depending on the composition, temperature, carrier concentration and other parameters of the photodetectors. To investigate R 0 A of In1−xGaxAs infrared photodetectors, in this paper, theoretical analysis of Auger recombination mechanism was carried out in the room temperature, by taking CCCH, CHHL and CHHS into account. The calculated results show that there are significant influences on R 0 A for various parameters in both p- and n-type regions of the devices. With carrier concentration around 1017 to 1018 cm−3, R 0 A of 108 Ω cm2 (n-region) and 106 Ω cm2 (p-region) are obtained for x = 0.47 , when thickness and surface recombination velocity of the sample are 5 μm and 100 m/s, respectively.