Title of article
Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3
Author/Authors
Pradhan، نويسنده , , Gopal K. and Bera، نويسنده , , Achintya and Kumar، نويسنده , , Pradeep and Muthu، نويسنده , , D.V.S. and Sood، نويسنده , , A.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
284
To page
287
Abstract
We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral ( α - Bi2Te3) to monoclinic ( β - Bi2Te3) structural transition at ∼8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm−1 which is dispersionless with pressure. The structural transition at ∼8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm−1 and 135 cm−1. The mode Grüneisen parameters are determined in both the α and β -phases.
Keywords
D. Electronic topological transition , C. High pressure Raman , A. Bi2Te3
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1792987
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