Title of article
Pressure-induced semiconductor–metal phase transition in Mg2Si
Author/Authors
Ren، نويسنده , , Wanbin and Han، نويسنده , , Yonghao and Liu، نويسنده , , Cailong and Su، نويسنده , , Ningning and Li، نويسنده , , Yan and Ma، نويسنده , , Boheng and Ma، نويسنده , , Yanzhang and Gao، نويسنده , , Chunxiao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
3
From page
440
To page
442
Abstract
In situ electrical resistivity measurement of powdered Mg2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg2Si underwent a pressure-induced semiconductor–metal phase transition that took place in the Ni2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.
Keywords
A. Semiconductors , D. Phase transitions , E. High pressure
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1793052
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