Title of article
First-principles study on the origin of ferromagnetism in n-type Cu-doped ZnO
Author/Authors
Fang، نويسنده , , D.Q. and De Sarkar، نويسنده , , Abir and Zhang، نويسنده , , R.Q.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
1057
To page
1060
Abstract
Based on the density functional calculations with the GGA+U correction, we elucidate the origin of the experimentally reported ferromagnetism in n-type Cu-doped ZnO. Pure Cu-doped ZnO shows the unoccupied 3d states in the gap introduced by Cu, resulting in the insulating ground state and weak magnetic exchange interactions, in contrast to the half-metallic ground state and high ferromagnetic stability predicted by the calculations without U correction. However, the electron traps induced by Cu in n-type Cu-doped ZnO may lead to the partial occupancy of the Cu gap states, which stabilize the ferromagnetic ordering between two Cu atoms.
Keywords
A. Semiconductors , D. Magnetic property , E. First-principles
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1793341
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