Title of article
InN doped with Zn: Bulk and surface investigation from first principles
Author/Authors
Wang، نويسنده , , Jianli and Tang، نويسنده , , Gang and Wu، نويسنده , , X.S. and Gu، نويسنده , , Mingqiang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
1168
To page
1171
Abstract
Structures and stabilities of Zn adsorption and incorporation at InN surfaces are systematically investigated by first-principles calculations. An InN (0001)–(2×2) surface covered by 3/4 monolayer Zn adsorption atoms at the H3 sites is found to be energetically favorable. The calculated surface energies demonstrate the stability of Zn-incorporated surfaces. Substitutional defects may act as a potential source for the bulk and surface p-type behavior in Zn-doped InN.
Keywords
A. Semiconductors , C. Point defects , A. Surfaces and interfaces
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1793405
Link To Document