Title of article
An extended Hückel study of the electronic properties of III–V compounds and their alloys
Author/Authors
Ribeiro، نويسنده , , Ingrid A. and Ribeiro، نويسنده , , Fabio J. and Martins، نويسنده , , A.S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
6
From page
50
To page
55
Abstract
In this work, we performed tight binding calculations of the electronic structure of III–V semiconductors compounds and their alloys based on the Extended Hückel Theory (EHT). In particular, this paper is focused on the dependency between band gap and the applied pressure and also the alloy composition.
Keywords
A. Semiconductors , D. Electronic band structure , E. High pressure , E. Strain
Journal title
Solid State Communications
Serial Year
2014
Journal title
Solid State Communications
Record number
1794814
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