Analysis of focused ion beam implantation of semiconductors by thermal microscopy

Implantation effects produced by focused ion beams in semiconductor materials have been analyzed with the help of thermal microscopy, based on thermal waves and laser-modulated optical reflectance (thermoreflectance). Implantation profiles related to variations of the ion dose and to the halos of neutrals and differently charged particles are interpreted with respect to the local thermal and electronic transport properties. For the signal excitation, different schemes have been applied: modulated laser beam irradiation; and additional electrical AC heating, giving improved signal contrast and improved lateral resolution for imaging applications on semiconductor devices.