Title of article
GROWTH OF ZnS SINGLE CRYSTALS BY CVT TECHNIQUE UNDER DIFFERENT MASS TRANSPORT STABILITY CONDITIONS
Author/Authors
Tafreshi، M. J. نويسنده Physics Department, Faculty of Science, Semnan University, Semnan, Iran. , , Dibaie، B. نويسنده Physics Department, Faculty of Science, Semnan University, Semnan, Iran. , , Fazli، M. نويسنده ,
Issue Information
فصلنامه با شماره پیاپی 33 سال 2012
Pages
11
From page
51
To page
61
Abstract
A thermodynamic model was used to find out the optimum temperature for the growth of ZnS single crystals
in closed ampoules by chemical vapor transport technique. Based on this model 1002 °C was found to be optimum
temperature for 2 mg/cm3 concentration of transporting agent (iodine). ZnS Crystals were grown in optimum (1002
°C) and non-optimum (902 °C and 1102 °C) temperatures. The composition structure and microstructure of the grown
crystals were studied by Atomic absorption spectroscopy, X-ray diffraction and Scanning electron microscopy
measurements. Properties of the grown crystals were correlated to the growth conditions especially a stability in mass
transport along the closed tube length.
Journal title
Iranian Journal of Materials Science and Engineering
Serial Year
2012
Journal title
Iranian Journal of Materials Science and Engineering
Record number
1801611
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