Heat and mass transfer phenomenon from an oxygen plasma to a semiconductor surface

Heat and mass transfer from a non-equilibrium low-pressure plasma of oxygen to an oxide semiconductor (n- or p-type) target have been measured. The aim of this work is to establish a correlation between the electronic properties of the semiconductors (electronic gap) and their reactivity (activation energy of the recombination reaction). The energy transfer from a gas to a material is defined by the recombination and accommodation coefficients, γ and β, respectively. The γ coefficient is measured in a pulsed radio frequency plasma reactor (13.56 MHz) in non-equilibrium conditions using an actinometric method. The test materials are n- and p-type semiconductors having band gap energies varying from 0.3 to 7.3 eV.