Low-pressure RF multi-plasma-jet system for deposition of alloy and composite thin films

A plasma-chemical reactor with a multi-plasma-jet RF hollow-cathode system has been developed for the deposition of alloy and composite thin films. Two primary plasma-jet channels and one secondary plasma channel were created in the volume of the reactor. High-density plasma flowing in these plasma-jet channels is generated inside the nozzles. These work simultaneously as RF hollow cathodes. An RF hollow cathode discharge is generated in these nozzles and is subsequently blown out of the reactor, creating flowing plasma jets. These jets were used for the deposition of SiGe and ZrCN thin films as an example of the deposition of alloy and composite thin films with this system. Co-sputtering or reactive co-sputtering of the nozzle material using high-density RF hollow-cathode plasma was applied for the deposition process. Control of the composition of the thin films was accomplished by setting the relative distance between the nozzle outlets without changing the plasma density inside the RF hollow cathodes. The composition of films was investigated with an electron microprobe system equipped with an X-ray microanalyser. This apparatus allowed quantitative analysis of the films. The stoichiometric homogeneity of the films was studied with this technique. Optical emission spectroscopy was used to investigate the secondary plasma-jet channel.