Generation of high voltage pulses for PBII devices

This report is devoted to the generation of high voltage pulses which can be used in order to run plasma-based ion implantation devices. We consider the circuitry of high voltage pulse creation with different energy storages and various kinds of switches, as thyratrons in combination with pulse forming networks, hard tube switches and IGBT-switches. During the last 10 years circuits with inductive energy storage and semiconductor opening switches (SOS) have been developed. We give a detailed overview on their ability to produce pulses of different polarity and amplitudes up to hundreds of kV, current values up to 10 kA, pulse duration up to hundreds of nanoseconds and frequencies up to 10 kHz with average output power up to tens of kW. This parameters make their application as power supplies for plasma-based ion implantation devices favourable. In the last section, high voltage modulation based on the grid-controlled extraction of electrons from the plasma is described. It is shown that such kind of modulator could be integrated into a device for plasma-based ion implantation.