Characterisation of inductively amplified magnetron devices implanted in an industrial PVD system

An inductively coupled RF plasma is used in order to enhance the ionisation level of magnetron sputter deposition. The process is based on conventional magnetron sputtering with the addition of an inductively coupled RF plasma generated by a 3-turn coil in the region between the sputtering cathode and the substrates. The high ionisation fraction presents many advantages: a more efficient ion etching in the first step of coating, better properties of coatings can be obtained by the control of ion flux and ion energy. Moreover, a better penetrability of coating on complex geometry substrates and an enhanced chemical reactivity resulting from the separate control of plasma near the substrate and near the target are expected. The influence of discharge amplification on magnetron current–voltage characteristics is shown. Aluminium coatings deposition rate, morphology and preferential orientations strongly depend on RF power applied to the coils. When aluminium is reactively sputtered in argon–oxygen mixtures, discharge amplification has the same effect on target poisoning as increasing the cathode power.