Title of article
Characterization of pulse plated Cu2O thin films
Author/Authors
Mahalingam، نويسنده , , T. and Chitra، نويسنده , , J.S.P. and Ravi، نويسنده , , G. and Chu، نويسنده , , J.P. and Sebastian، نويسنده , , P.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
111
To page
114
Abstract
Cuprous oxide (Cu2O) thin films are synthesised on Cu and tin oxide coated substrates by electrochemical pulse plating technique. The effect of current density and duty cycle on the growth of Cu2O films is studied. Structural studies reveal an optimum duty cycle of 33% to deposit well-crystallized Cu2O film. The effect of deposition parameters on the structural and optical properties are carried out. It is observed that annealing below 350 °C improved the crystallinity and grain size of Cu2O films whereas annealing above 450 °C exhibited the conversion of Cu2O into CuO. Photoelectrochemical solar cell studies showed improved performance for Cu2O electrodes and the results are discussed.
Keywords
Photoelectrochemical solar cells , Etching studies , Annealing studies , Pulse plating technique , Cuprous oxide film
Journal title
Surface and Coatings Technology
Serial Year
2003
Journal title
Surface and Coatings Technology
Record number
1805431
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