Preparation of TiN films at room temperature by inductively coupled plasma assisted chemical vapor deposition

TiN films were deposited by inductively coupled plasma (ICP) assisted CVD using a gas mixture of TiCl4, N2, H2 and Ar at room temperature. For ICP generation, the RF power was applied to a dielectric encapsulated RFI antenna installed inside the deposition chamber. The ICP power was varied from 100 to 400 W. With increasing RF power, the deposition rate, the resistivity, and the Cl concentration were decreased. Although the deposition of TiN was carried out at room temperature, the Cl content in the films was kept as low as approximately 2.5 at.%. TiCl4 was injected at the hot spot, where the electron temperature was highest in the reactor. As a result, TiCl4 could be more easily dissociated and TiN films with a low Cl concentration were produced with the deposition rate of 1 μm/h at room temperature. The coupling efficiency increased with increasing ICP power up to 85% at 400 W. The ion density was increased to approximately 6.34×1011/cm3 at 400 W (only Ar).