HRTEM, SEM and XRD characterization of nanocrystalline Sb2S3 thin films deposited by chemical bath route

In the present research paper, Sb2S3 thin films were deposited onto glass substrates at 279 K for various deposition periods. Preparative parameters such as bath composition, complexing agent, deposition time are optimized to get to hole free and chemically uniform Sb2S3 nanocrystalline thin films. Characterization of such deposited films was carried out by use of X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), and scanning electron microscopy (SEM) techniques. Stoichiometry of the film is studied from EDAX and RBS analysis which showed some inclusion in the films which is unavoidable for chemically deposited chalcogenide films. Shift in band gap energy with film thickness and/or grain size can be understood on the basis of quantum size effects observed in the films of semiconductor i.e. quantum confinement of charge carriers in the crystallites.