Simulation of SiC deposition from SiH4/C3H8/Ar/H2 mixtures in a cold-wall CVD reactor

Two-dimensional simulations of 3C–SiC growth from SiH4/C3H8/Ar/H2 mixtures in a cold-wall CVD reactor have been performed. The impingement rate of the species incoming at the surface can be extracted from a reactor simulation and used as input data in an atomic-scale growth modeling. However, only a restricted number of species can be considered in such a multiscale approach combining several numerical codes. For this reason, two rather simple reaction schemes are selected in the present reactor modeling work. The predicted deposition rate profiles obtained using both schemes are compared to the experimental profiles. The relative contributions of the various species in the deposition process are calculated, and the most important species are identified. The strong influence of thermal diffusion is also emphasized.