Oxidation of BON and Si-DLC thin films

Amorphous boron oxynitrogen (BON) and Si-diamond-like carbon (DLC) thin films were synthesized by the RF plasma-enhanced chemical vapor deposition (RF-PECVD) method, and their oxidation behavior was studied up to 500 °C in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or CO2 from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.