Deposition of TiN films on various substrates from alkoxide solution by plasma-enhanced CVD

TiN films were deposited at low temperatures of 300–600 °C on various substrates (Si wafer, silica glass, stainless steel) by injecting titanium tetra-ethoxide (TTEO) solution at a rate of 0.05–0.3 ml min−1 into a N2 plasma. Parameters affecting the formation of TiN films such as the nature of the substrate, substrate temperature, feed rate of TTEO, and N2 flow rate were examined. The films were characterized by XRD and scanning electron microscopy and the N and Ti contents determined, together with the O and C impurity contents, by X-ray photoelectron microscopy. The films deposited on Si wafers and silica glass at > 500 °C possessed a columnar structure of well-crystallized particles, whereas those on SUS contained coagulated particles with a greater content of C and O impurities.