Title of article
Single source precursors for plasma-enhanced CVD of SiCN films, investigated by mass spectrometry
Author/Authors
Stelzner، نويسنده , , Th. and Arold، نويسنده , , M. and Falk، نويسنده , , F. and Stafast، نويسنده , , H. and Probst، نويسنده , , D. and Hoche، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
372
To page
376
Abstract
For plasma-enhanced (PE) CVD of SiCN thin films, hexamethyldisilazane (HMDS) and bis(trimethylsilyl)carbodiimide (BTSC) were selected as single source precursors and investigated by mass spectrometry. Based on their fragmentation patterns, X–NSi(CH3)2 with X=H (HMDS) or X=CN (BTSC) are postulated as film forming species. Their Si : N ratio is identical with that of the related SiCN thin films. H2, CH4, and C2H6 are found in the processing gas mixture during PECVD.
Keywords
PECVD , SiCN , mass spectrometry , Chemical composition
Journal title
Surface and Coatings Technology
Serial Year
2005
Journal title
Surface and Coatings Technology
Record number
1810076
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