Title of article
Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films
Author/Authors
Schulz، نويسنده , , Stephan and Fahrenholz، نويسنده , , Sonja and Schuchmann، نويسنده , , Daniella and Kuczkowski، نويسنده , , Andreas and Assenmacher، نويسنده , , Wilfried and Reilmann، نويسنده , , Frank and Bahlawane، نويسنده , , Naoufal and Kohse-Hِinghaus، نويسنده , , Katharina، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
9071
To page
9075
Abstract
Tailor-made single source precursors of the type [R2GaSbR′2]x (R, R′ = alkyl) have been prepared by a novel synthetic pathways. According to their very low vapor pressures, a specifically designed HV-MOCVD reactor was built, which can be used for the deposition of GaSb material films. The influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting films will be discussed.
Keywords
gallium antimonide , Organometallic CVD , Compound semiconductors
Journal title
Surface and Coatings Technology
Serial Year
2007
Journal title
Surface and Coatings Technology
Record number
1817293
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