Reactive gas pulsing process: A method to extend the composition range in sputtered iron oxynitride films

Fe–O–N films were deposited on glass and silicon substrates using two reactive magnetron sputtering processes. In the first process called conventional process (CP), the oxygen flow rate was kept constant during the deposition duration. On the other hand, the oxygen flow rate was pulsed in the second process called reactive gas pulsing process (RGPP). To compare the ability of both processes for the deposition of Fe–O–N films, the same range of oxygen amounts was introduced in the deposition reactor by adjusting either the oxygen flow rate in the CP or the duration and the shape of the oxygen pulse in the RGPP. The deposition rate, the chemical composition and the optical transmittance of the films deposited using both processes were compared. The reactive gas pulsing process allowed the deposition of a wide range of film compositions with high deposition rate and tuneable optical properties.