Title of article
Influence of Ar gas flow rate in organosilicon plasma for the fabrication of SiO:CH thin films by PECVD method
Author/Authors
Yun، نويسنده , , Yongsup and Yoshida، نويسنده , , Takanori and Shimazu، نويسنده , , Norifumi and Nanba، نويسنده , , Naoki and Inoue، نويسنده , , Yasushi and Saito، نويسنده , , Nagahiro and Takai، نويسنده , , Osamu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
5259
To page
5261
Abstract
SiO:CH films were prepared by capacitively coupled RF PECVD to investigate the dependence on Ar gas flow ratio based on plasma reactions and film properties. The introduced Ar gas flow rate increases an the amorphous carbon network, and dangling bonds or –OH terminations due to Ar ion bombardment. Moreover, Ar gas flow rate alters the dissociation reactions and leads to change the chemical bonding states and the water contact angle.
Keywords
XPS , OES , water contact angle , Binder film of nano-cluster , FT-IR
Journal title
Surface and Coatings Technology
Serial Year
2008
Journal title
Surface and Coatings Technology
Record number
1819428
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