Title of article
Interface structure of microcrystalline silicon deposited by inductive coupled plasma using internal low inductance antenna
Author/Authors
Kaki، نويسنده , , H. and Tomyo، نويسنده , , A. and Takahashi، نويسنده , , E. and Hayashi، نويسنده , , T. and Ogata، نويسنده , , K. and Ebe، نويسنده , , A. and Takenaka، نويسنده , , K. and Setsuhara، نويسنده , , Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
5672
To page
5675
Abstract
Hydrogenated microcrystalline silicon (µc-Si:H) films were prepared by inductive coupled plasma chemical vapor deposition (ICP-CVD) system using internal low inductance antenna (LIA) units on various under layer composed of Si, O, and N. The resultant changes in the crystallinity of the µc-Si:H films were investigated using Raman scattering spectroscopy and the details of the interface structure were observed by high resolution transmission electron microscope. We had found that µc-Si:H film on the SiNx layer treated by O2 plasma has good interface quality. The highly crystallized µc-Si:H films with no amorphous incubation layer at interface of Si/SiNx could be directly deposited on the SiNx layer.
Keywords
Inductive coupled plasma , Thin films , chemical vapor deposition , microcrystalline silicon
Journal title
Surface and Coatings Technology
Serial Year
2008
Journal title
Surface and Coatings Technology
Record number
1819652
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