Title of article
Study of the interaction of highly charged ions with SiO2 surface
Author/Authors
Peng، نويسنده , , H.B. and Cheng، نويسنده , , R. and Yang، نويسنده , , X.Y. and Han، نويسنده , , Y.C. and Zhao، نويسنده , , Y.T. and Yang، نويسنده , , J. and Wang، نويسنده , , S.W. and Fang، نويسنده , , Y. and Wang، نويسنده , , T.S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
2387
To page
2389
Abstract
Highly charged ions (HCIs) Arq+/Pbq+are extracted from ECR source and impacted on solid surface of SiO2. Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering.
Keywords
Highly charged ions (HCIs) , sputtering , sputtering yield
Journal title
Surface and Coatings Technology
Serial Year
2009
Journal title
Surface and Coatings Technology
Record number
1820738
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