Modification of the electrical properties of polyimide by irradiation with 80 keV Xe ions

We modify the electrical properties of polyimide (PI) films by irradiation with 80 keV Xe ions. The surface resistivity of irradiated PI film at room temperature decreases remarkably from 1.2 × 1014 Ω/□ for virgin PI film to 3.15 × 106 Ω/□ for PI film irradiated by 5.0 × 1016 ions/cm2, and the temperature dependence of the resistivity of the treated films is well-fit using Mottʹs Equation. The irradiated PI film structure is studied using Raman spectroscopy, X-ray diffraction, and Rutherford Backscattering Spectrometry. The concentration of O in the irradiated layer decreases with increasing fluence, while the variation of N concentration is negligible. Graphite-like carbon-rich phases are created in the irradiated layers, leading to the modification of the electrical properties.