Ni-YSZ films deposited by reactive magnetron sputtering for SOFC applications

Ni-YSZ films are deposited by reactive magnetron sputtering from a single Ni/Zr/Y metallic target at rates as high as 4 µm h− 1. Tailoring both DC pulsed power and oxygen partial pressure, a stable deposition process was obtained. Columnar morphology was observed in the as-deposited films. Annealing in air at 900 °C was conducted, after which a fully crystallized structure was achieved. Chemical composition has been measured by Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA). To find optimal conditions for reactive deposition of the films, effect of oxygen flow rate on the discharge parameters was studied. Film deposition onto glass substrates was carried out to measure electrical conductivity.