Influence of O2/Ar flow ratio on the structure and optical properties of sputtered hafnium dioxide thin films

Hafnium dioxide (HfO2) thin films were deposited on a quartz substrate by RF reactive magnetron sputtering. The influence of O2/Ar flow ratio on the deposition rate, structure and optical properties of HfO2 thin films were systematically studied using X-ray diffraction (XRD), scan electron microscopy (SEM) and UV–visible spectroscopy. The results show that the deposition rate decreases obviously when the O2/Ar flow ratio increases from 0 to 0.25 and then, decreases little as the O2/Ar flow ratio further increases to 0.50. The HfO2 thin films prepared are all polycrystalline with a monoclinic phase. The thin film deposited with pure argon shows a preferential growth and has considerably improved crystallinity and much larger crystallite size. Meanwhile, after oxygen is introduced into the deposition, the thin films prepared have random orientation, weakened crystallinity and smaller crystallite size. The refractive index is higher for the thin film deposited without oxygen and increases as the O2/Ar flow ratio increases from 0.25 to 0.50. The band gap energy of the thin film increases with an increasing O2/Ar flow ratio.