Surface morphology evolution and properties of silicon coating on silicon carbide ceramics by advanced plasma source ion plating

Effects of substrate surface defects and deposition parameters on deposition of silicon coatings onto silicon carbide ceramics by plasma source ion plating for surface modification were studied in this paper. Substrate surface defects like holes and protuberances were not duplicated during the coating process. The main discontinuities on silicon coatings turned out to be notches which were probably generated by combined impact of excessive internal stress and persistent ion bombardment during the coating process. Continuous, homogenous and well-bonded 2 μm thick amorphous silicon coatings with smooth surface were obtained by improving plasma power, slowing down deposition rate and rising substrate temperature. The total reflectance of silicon coatings within 400–750 nm wavelength was also studied. The higher the residual compressive stress, the higher is the total reflectance. Rising substrate temperature would also significantly improve the total reflectance. The enhancement might be attributed to shortened SiSi bonding under high compressive stress and higher compactness at higher substrate temperature, respectively.