Reflectance, transmittance, and absorbance of ZnO implanted with 60 keV Sn+ ions

To obtain additional information for discussion on the origin of deep-level band photoluminescence (PL) in ZnO, hydrothermal ZnO wafers implanted with 60 keV Sn+ ions at room-temperature (RT) and low temperature (LT) of approximately 120 K were examined by transmittance, absorbance, reflectance, AFM, and TEM techniques. The thickness of the implanted layer was approximately 45 nm. The sharpness of the characteristic feature normally observed in reflectance spectra gradually degraded with implantation dose. The tail observed in the absorbance spectra of the implanted layer red-shifted with implantation dose. This excludes the possibility that the red-shift of the deep-level PL band with implantation dose was caused by an increase in concentration of LiZn centers with respect to that of oxygen vacancies.